2021, Vol. 2, Issue 2, Part A
An approach to optimize manufacturing of field-effect heterotransistors in the framework of a static latched comparator for increasing of integration rate
Author(s): EL Pankratov
Abstract: We consider a way to increase density of field-effect heterotransistors in the framework of a static latched comparator. Based on the way we shall to consider a heterostructure with a specific composition. Some areas of the considered heterostructure must be doped by ion type of doping or by diffusion type of doping with future optimal annealing. We also present an analytical solution method for analysis technological process of creation of the considered comparator. This method leads to possibility to accounting of changing of parameters of technological process in time and space. One can also to account nonlinearity of the above process.
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Pages: 51-71 | Views: 1022 | Downloads: 375
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How to cite this article:
EL Pankratov. An approach to optimize manufacturing of field-effect heterotransistors in the framework of a static latched comparator for increasing of integration rate. Int J Electr Data Commun 2021;2(2):51-71.
