International Journal of Electrical and Data Communication
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P-ISSN: 2708-3969, E-ISSN: 2708-3977

2022, Vol. 3, Issue 1, Part A


On optimization of manufacturing of an operational trans conductance amplifier based on hetero structures to increase density of their elements: Influence of miss-match-induced stress and porosity of materials on technological process


Author(s): EL Pankratov

Abstract: In this paper we introduce an approach to increase density of field-effect transistors framework an operational transconductance amplifier. Framework the approach we consider manufacturing the amplifier in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.

Pages: 23-32 | Views: 701 | Downloads: 329

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International Journal of Electrical and Data Communication
How to cite this article:
EL Pankratov. On optimization of manufacturing of an operational trans conductance amplifier based on hetero structures to increase density of their elements: Influence of miss-match-induced stress and porosity of materials on technological process. Int J Electr Data Commun 2022;3(1):23-32.
International Journal of Electrical and Data Communication
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