2022, Vol. 3, Issue 2, Part A
On of manufacturing of a fully differential dynamic comparator with increased density of elements
Author(s): EL Pankratov
Abstract: In this paper we introduce an approach to increase density of field-effect transistors in the framework of fully differential dynamic comparator. In the framework of the approach we consider manufacturing the inverter in a heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed in the framework of optimized scheme.
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Pages: 68-79 | Views: 153 | Downloads: 51
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How to cite this article:
EL Pankratov. On of manufacturing of a fully differential dynamic comparator with increased density of elements. Int J Electr Data Commun 2022;3(2):68-79.