International Journal of Electrical and Data Communication
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P-ISSN: 2708-3969, E-ISSN: 2708-3977

2023, Vol. 4, Issue 1, Part A


On optimization of manufacturing of MOSFET-filters to increase integration rate of their elements


Author(s): EL Pankratov

Abstract: In this paper we introduce an approach to increase integration rate of elements in a MOSFET-filter. The approach based on decreasing of dimension of elements of the invertor (diodes and bipolar transistors) due to manufacturing of these elements by diffusion or ion implantation in a heterostructure with specific configuration and optimization of annealing of dopant and radiation defects.

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Pages: 01-08 | Views: 465 | Downloads: 180

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International Journal of Electrical and Data Communication
How to cite this article:
EL Pankratov. On optimization of manufacturing of MOSFET-filters to increase integration rate of their elements. Int J Electr Data Commun 2023;4(1):01-08.
International Journal of Electrical and Data Communication
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