International Journal of Electrical and Data Communication
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P-ISSN: 2708-3969, E-ISSN: 2708-3977

2022, Vol. 3, Issue 1, Part A

Gate all around MOSFET

Author(s): Prateek and Shamsher Singh

Abstract: Introducing a new route for transistor scaling, the cylindrical gate all around (GAA) MOSFET is a radical idea and a prospective contender to replace conventional MOSFETs. An investigation of the electrical properties of cylindrical GGA (CGAA) MOSFETs with 50nm channel length (Lg) and 10nm channel thickness (tsi) is carried out in this study. Calculations and analyses of different electrical properties such as the on current (ION) and subthreshold leakage current (IOFF) at various device design parameters, as well as the threshold voltage (Vth) and DIBL, are performed. All of the Cylindrical GAA MOSFETs' device performance is studied using the Silva Atlas device simulator.

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Pages: 01-09 | Views: 374 | Downloads: 145

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How to cite this article:
Prateek, Shamsher Singh. Gate all around MOSFET. Int J Electr Data Commun 2022;3(1):01-09.
International Journal of Electrical and Data Communication
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