International Journal of Electrical and Data Communication
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P-ISSN: 2708-3969, E-ISSN: 2708-3977

2022, Vol. 3, Issue 1, Part A


Cylindrical gate all around MOSFET


Author(s): Deepak Kumar and Shamsher Singh

Abstract: Here, the electrical and physical properties of MOSFET are discussed. MOSFET architectures have been analysed according to their categories, as well as a three-dimensional schematic of the bulk MOSFET. The output I-V characteristics, the transfer characteristics, and the sub threshold current in the MOSFET channel have all been examined in order to better understand the device's electrical properties. The coulomb, phonon, and surface roughness scattering effects on charge carrier mobility in the MOSFET channel have all been examined. Finally, the influence of the Fin layer shape on the performance of the MOSFET was examined in this review.

Pages: 18-22 | Views: 700 | Downloads: 352

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How to cite this article:
Deepak Kumar, Shamsher Singh. Cylindrical gate all around MOSFET. Int J Electr Data Commun 2022;3(1):18-22.
International Journal of Electrical and Data Communication
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