2022, Vol. 3, Issue 2, Part A
On increasing of integration rate of elements in a inverter with HERIC topology
Author(s): EL Pankratov
Abstract: In this paper we introduce an approach to increase integration rate of elements in an inverter with HERIC topology. The approach based on decreasing of dimension of elements of the invertor (diodes and bipolar transistors) due to manufacturing of these elements by diffusion or ion implantation in a heterostructure with specific configuration and optimization of annealing of dopant and radiation defects.
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Pages: 80-90 | Views: 511 | Downloads: 183
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How to cite this article:
EL Pankratov. On increasing of integration rate of elements in a inverter with HERIC topology. Int J Electr Data Commun 2022;3(2):80-90.
