International Journal of Electrical and Data Communication
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P-ISSN: 2708-3969, E-ISSN: 2708-3977

2023, Vol. 4, Issue 1, Part A


On approach to increase density of elements of symmetrical multiplier. Influence of mismatch-induced stress and porosity of materials on technological process


Author(s): EL Pankratov

Abstract: In this paper we introduce an approach to increase density of p-n-junctions in the framework of a symmetrical multiplier. In the framework of the approach we consider manufacturing the symmetrical multiplier in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed in the framework of the optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.

Pages: 38-55 | Views: 377 | Downloads: 141

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International Journal of Electrical and Data Communication
How to cite this article:
EL Pankratov. On approach to increase density of elements of symmetrical multiplier. Influence of mismatch-induced stress and porosity of materials on technological process. Int J Electr Data Commun 2023;4(1):38-55.
International Journal of Electrical and Data Communication
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